050-7442 rev a 6-2005 APT80GP60JDQ3 typical performance curves maximum ratings all ratings: t c = 25c unless otherwise speci?ed. static electrical characteristics characteristic / test conditionscollector-emitter breakdown voltage (v ge = 0v, i c = 1250a) gate threshold voltage (v ce = v ge , i c = 2.5ma, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 80a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 80a, t j = 125c) collector cut-off current (v ce = 600v, v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = 600v, v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) symbol v (br)ces v ge(th) v ce(on) i ces i ges units volts ana symbol v ces v ge i c1 i c2 i cm ssoa p d t j ,t stg t l APT80GP60JDQ3 600 30 151 68 330 330a @ 600v 462 -55 to 150 300 unit volts amps watts c parametercollector-emitter voltage gate-emitter voltage continuous collector current @ t c = 25c continuous collector current @ t c = 110c pulsed collector current 1 @ t c = 150c switching safe operating area @ t j = 150c total power dissipationoperating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. apt website - http://www.advancedpower.com caution: these devices are sensitive to electrostatic discharge. proper hand ling procedures should be followed. min typ max 600 3.0 4.5 6.0 2.2 2.7 2.1 1250 5500 100 the power mos 7 ? igbt is a new generation of high voltage power igbts. using punch through technology this igbt is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. ? low conduction loss ? 100 khz operation @ 400v, 39a ? low gate charge ? 50 khz operation @ 400v, 59a ? ultrafast tail current shutoff ? ssoa rated power mos 7 ? igbt ? c e g 600v APT80GP60JDQ3 s o t - 2 2 7 isotop ? file # e145592 "ul recognized" g e e c downloaded from: http:///
050-7442 rev a 6-2005 APT80GP60JDQ3 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and fred leakages 3 see mil-std-750 method 3471. 4 e on1 is the clam ped inductive turn-on-energy of the igbt only, without the effect of a commutating diod e reverse recovery current adding to the igbt turn-on loss. (see figure 24.) 5 e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switching loss. (see figures 21, 22.) 6 e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. (see figures 21, 23.) apt reserves the right to change, without notice, the speci?cations and information contained herein . dynamic characteristics symbol c ies c oes c res v gep q g q ge q gc ssoa t d(on) t r t d(off) t f e on1 e on2 e off t d(on) t r t d(off) t f e on1 e on2 e off test conditions capacitance v ge = 0v, v ce = 25v f = 1 mhz gate charge v ge = 15v v ce = 300v i c = 80a t j = 150c, r g = 5 ?, v ge = 15v, l = 100h,v ce = 600v inductive switching (25c) v cc = 400v v ge = 15v i c = 80a r g = 5 ? t j = +25c inductive switching (125c) v cc = 400v v ge = 15v i c = 80a r g = 5 ? t j = +125c characteristicinput capacitance output capacitance reverse transfer capacitance gate-to-emitter plateau voltage total gate charge 3 gate-emitter charge gate-collector ("miller ") charge switching safe operating area turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 turn-on delay timecurrent rise time turn-off delay time current fall time turn-on switching energy 4 4 turn-on switching energy (diode) 5 5 turn-off switching energy 6 min typ max 9840 735 40 7.5 280 65 85 330 29 40 115 80 795 1535 1200 29 40 150 85 795 2155 1690 unit pf v nc a ns j ns j thermal and mechanical characteristics unit c/w gm volts min typ max .27 .60 29.2 2500 characteristicjunction to case (igbt) junction to case (diode) package weightrms voltage (50-60hhz sinusoidal wavefomr ffrom terminals to mounting base for 1 min.) symbol r jc r jc w t v isolation downloaded from: http:///
050-7442 rev a 6-2005 APT80GP60JDQ3 typical performance curves bv ces , collector-to-emitter breakdown v ce , collector-to-emitter voltage (v) i c , collector current (a) i c , collector current (a) voltage (normalized) i c, dc collector current(a) v ce , collector-to-emitter voltage (v) v ge , gate-to-emitter voltage (v) i c , collector current (a) 250s pulse test<0.5 % duty cycle 120100 8060 40 20 0 500400 300 200 100 0 3.53.0 2.5 2.0 1.5 1.0 0.5 0 1.201.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 5 6 7 8 9 10 0 50 100 150 200 250 300 6 8 10 12 14 16 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150 120100 8060 40 20 0 1614 12 10 86 4 2 0 3.02.5 2.0 1.5 1.0 0.5 0 200180 160 140 120 100 8060 40 20 0 v ce , collecter-to-emitter voltage (v) v ce , collecter-to-emitter voltage (v) figure 1, output characteristics(t j = 25c) figure 2, output characteristics (t j = 125c) v ge , gate-to-emitter voltage (v) gate charge (nc) figure 3, transfer characteristics figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 5, on state voltage vs gate-to- emitter voltage figure 6, on state voltage vs junction tem perature t j , junction temperature (c) t c , case temperature (c) figure 7, breakdown voltage vs. junction temperature figure 8, dc collector current vs case temper ature t j = 125c t j = 25c t j = -55c v ge = 15v. 250s pulse test <0.5 % duty cycle t j = 125c t j = 25c t j = -55c t j = 125c t j = 25c t j = -55c v ce = 480v i c = 80a t j = 25c v ce = 120v v ce = 300v t j = 25c. 250s pulse test <0.5 % duty cycle i c = 160a i c = 80a i c = 40a i c = 160a i c = 80a i c = 40a downloaded from: http:///
050-7442 rev a 6-2005 APT80GP60JDQ3 switching energy losses (j) e on2 , turn on energy loss (j) t r, rise time (ns) t d(on) , turn-on delay time (ns) switching energy losses (j) e off , turn off energy loss (j) t f, fall time (ns) t d (off) , turn-off delay time (ns) i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 9, turn-on delay time vs collector current figure 10, turn-off delay time vs collector curre nt i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 11, current rise time vs collector current figure 12, current fall time vs collector curre nt i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 13, turn-on energy loss vs collector current figure 14, turn off energy loss vs collector current r g , gate resistance (ohms) t j , junction temperature (c) figure 15, switching energy losses vs. gate resistance figure 16, switching energy losses vs junc tion temperature r g = 5 ? , l = 100 h, v ce = 400v v ce = 400v t j = 25c , t j =125c r g = 5 ? l = 100 h 4035 30 25 20 15 10 50 7060 50 40 30 20 10 0 40003500 3000 2500 2000 1500 1000 500 0 60005000 4000 3000 2000 1000 0 180160 140 120 100 8060 40 20 0 140120 100 8060 40 20 0 40003000 2000 1000 0 40003000 2000 1000 0 v ge = 15v 10 30 50 70 90 110 130 10 30 50 70 90 110 130 10 30 50 70 90 110 130 10 30 50 70 90 110 130 10 30 50 70 90 110 130 10 30 50 70 90 110 130 5 10 15 20 25 30 0 25 50 75 100 125 r g = 5 ? , l = 100 h, v ce = 400v v ge =15v,t j =125c v ge =15v,t j =25c v ce = 400v r g = 5 ? l = 100 h t j = 25 or 125c,v ge = 15v t j = 125c, v ge = 15v t j = 25c, v ge = 15v v ce = 400v v ge = +15v r g = 5 ? t j = 125c,v ge = 15v t j = 25c,v ge = 15v v ce = 400v v ge = +15v r g = 5 ? t j = 125c, v ge = 15v t j = 25c, v ge = 15v e on2, 120a e off, 120a e on2, 80a e off, 80a e on2, 40a e off, 40a v ce = 400v v ge = +15v t j = 125c e on2, 120a e off, 120a e on2, 80a e off, 80a e on2, 40a e off, 40a v ce = 400v v ge = +15v r g = 5 ? downloaded from: http:///
050-7442 rev a 6-2005 APT80GP60JDQ3 typical performance curves 0.300.25 0.20 0.15 0.10 0.05 0 z jc , thermal impedance (c/w) 0.3 0.9 0.7 single pulse rectangular pulse duration (seconds) figure 19a, maximum effective transient thermal impedance, junction-to-case vs pulse duration 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 20,00010,000 50001000 5010 51 300250 200 150 100 50 0 c, capacitance ( p f) i c , collector current (a) v ce , collector-to-emitter voltage (volts) v ce , collector to emitter voltage figure 17, capacitance vs collector-to-emitter voltage figure 18,minimim switching safe operatin g area 0 10 20 30 40 50 0 100 200 300 400 500 600 700 figure 19b, transient thermal impedance model 10 20 30 40 50 60 70 80 90 100 110 120 f max , operating frequency (khz) i c , collector current (a) figure 20, operating frequency vs collector current t j = 125 c t c = 75 c d = 50 %v ce = 400v r g = 5 ? 190100 5010 51 0.5 0.1 0.05 f max = min (f max , f max2 ) 0.05 f max1 = t d(on) + t r + t d(off) + t f p diss - p cond e on2 + e off f max2 = p diss = t j - t c r jc peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: c ies c oes c res 0.02600.0584 0.185 0.001190.0354 0.463 power (watts) junction temp ( c) rc model case temperature( c) downloaded from: http:///
050-7442 rev a 6-2005 APT80GP60JDQ3 figure 22, turn-on switching waveforms and de?nitions figure 23, turn-off switching waveforms and de?nitions apt60dq60 i c a d.u.t. v ce figure 21, inductive switching test circuit v cc *driver same type as d.u.t. i c v clamp 100uh v test a a b d.u.t. driver* v ce figure 24, e on1 test circuit t j = 125 c 10% 10% 5% t d(on) 90% t r 5 % switching energy collector voltage collector current gate voltage t j = 125 c collector voltage gate voltage collector current 90% t d(off) 90% t f 10% 0 switching energy downloaded from: http:///
050-7442 rev a 6-2005 APT80GP60JDQ3 typical performance curves characteristic / test conditionsmaximum average forward current (t c = 99c, duty cycle = 0.5) rms forward current (square wave, 50% duty)non-repetitive forward surge current (t j = 45c, 8.3ms) symbol i f (av) i f (rms) i fsm symbol v f characteristic / test conditions i f = 80a forward voltage i f = 160a i f = 80a, t j = 125c static electrical characteristics unit amps unit volts min typ max 1.82 2.21 1.56 APT80GP60JDQ3 6085 600 dynamic characteristics maximum ratings all ratings: t c = 25c unless otherwise speci?ed. ultrafast soft recovery anti-parallel diode min typ max - - 160 - 70 - 100 - 4 - - 140 - 690 - 9 - - 80 - 1540 - 31 unit ns nc amps ns nc amps ns nc amps characteristicreverse recovery time reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current symbol t rr t rr q rr i rrm t rr q rr i rrm t rr q rr i rrm test conditions i f = 60a, di f /dt = -200a/ s v r = 400v, t c = 25 c i f = 60a, di f /dt = -200a/ s v r = 400v, t c = 125 c i f = 60a, di f /dt = -1000a/ s v r = 400v, t c = 125 c i f = 1a, di f /dt = -100a/ s, v r = 30v, t j = 25 c figure 25b, transient thermal impedance model z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 25a. maximum effective transient thermal impedance, junction-to-case vs. pulse duration 0.700.60 0.50 0.40 0.30 0.20 0.10 0 0.5 single pulse 0.1 0.3 0.7 0.9 0.05 0.1590.255 0.186 0.00560 0.0849 0.489 power (watts) junction temp ( c) rc model case temperature ( c) downloaded from: http:///
050-7442 rev a 6-2005 APT80GP60JDQ3 t j = 125 c v r = 400v 30a 60a 120a 160140 120 100 8060 40 20 0 6050 40 30 20 10 0 duty cycle = 0.5 t j = 175 c 100 8060 40 20 0 1.21.0 0.8 0.6 0.4 0.2 0.0 600500 400 300 200 100 0 c j , junction capacitance k f , dynamic parameters (pf) (normalized to 1000a/ s) i f(av) (a) t j , junction temperature ( c) case temperature ( c) figure 30. dynamic parameters vs. junction temperature figure 31. maximum average fo rward current vs. casetemperature v r , reverse voltage (v) figure 32. junction capacitance vs. reverse voltage 200180 160 140 120 100 8060 40 20 0 25002000 1500 1000 500 0 v f , anode-to-cathode voltage (v) -di f /dt, current rate of change(a/ s) figure 26. forward current vs. forward voltage figure 27. reverse recovery time vs. current rate of change -di f /dt, current rate of change (a/ s) -di f /dt, current rate of change (a/ s) figure 28. reverse recovery charge vs. current rate of change figure 29. reverse recovery cu rrent vs. current rate of change q rr , reverse recovery charge i f , forward current (nc) (a) i rrm , reverse recovery current t rr , reverse recovery time (a) (ns) t j = 175 c t j = -55 c t j = 25 c t j = 125 c t j = 125 c v r = 400v 60a 30a 120a 0 0.5 1.0 1.5 2.0 2.5 0 200 400 600 800 1000 1200 1400 1600 0 200 400 600 800 1000 1200 1400 1600 0 200 400 600 800 1000 1200 1400 1600 t j = 125 c v r = 400v 120a 60a 30a t rr q rr q rr t rr i rrm 0 25 50 75 100 125 150 25 50 75 100 125 150 175 1 10 100 200 downloaded from: http:///
050-7442 rev a 6-2005 APT80GP60JDQ3 typical performance curves 4 3 1 2 5 5 zero 1 2 3 4 di f /dt - rate of diode current change through zero crossing. i f - forward conduction current i rrm - maximum reverse recovery current. t rr - reverse r ecovery time, measured from zero crossing where diode q rr - area under the curve defined by i rrm and t rr . current goes from positive to negative, to the point at which the straight line through i rrm and 0.25 i rrm passes through zero. figure 33. diode test circuit figure 34, diode reverse recovery waveform and definitions 0.25 i rrm pearson 2878 current transformer di f /dt adjust 30 h d.u.t. +18v 0v v r t rr / q rr waveform apt60m75l2ll 31.5 (1.240)31.7 (1.248) dimensions in millimeters and (inches) 7.8 (.307)8.2 (.322) 30.1 (1.185)30.3 (1.193) 38.0 (1.496)38.2 (1.504) 14.9 (.587)15.1 (.594) 11.8 (.463)12.2 (.480) 8.9 (.350)9.6 (.378) hex nut m4 (4 places) 0.75 (.030)0.85 (.033) 12.6 (.496)12.8 (.504) 25.2 (0.992)25.4 (1.000) 1.95 (.077)2.14 (.084) * emitter/anode collector/cathode gate * r = 4.0 (.157) (2 places) 4.0 (.157)4.2 (.165) (2 places) w=4.1 (.161)w=4.3 (.169) h=4.8 (.187)h=4.9 (.193) (4 places) 3.3 (.129)3.6 (.143) * emitter/anode emitter/anode terminals are shorted internally. current handling capability is equal for either emitter/anode terminal. apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5, 182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign p atents. us and foreign patents pending. all rights reserved. isotop ? is a registered trademark of sgs thomson. sot-227 (isotop ? ) package outline downloaded from: http:///
|
